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| Semiconductor RFM10N45, RFM10N50 10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17435. September 1998 Features [ /Title (RFM10 N45, RFM10 N50) /Subject 10A, 50V nd 00V, .600 hm, Nhannel ower OSETs) /Author ) /Keyords Harris emionducor, Nhannel ower OSETs, O04AA) /Creator ) /DOCIN O pdfark /Pageode * 10A, 450V and 500V * rDS(ON) = 0.600 Ordering Information PART NUMBER RFM10N45 RFM10N50 PACKAGE TO-204AA TO-204AA BRAND RFM10N45 RFM10N50 NOTE: When ordering, include the entire part number. Symbol D G S Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1998 File Number 1788.1 5-1 RFM10N45, RFM10N50 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFM10N45 450 450 10 20 20 150 1.2 -55 to 150 260 RFM10N50 500 500 10 20 20 150 1.2 -55 to 150 260 UNITS V V A A V W W/oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 1M) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS VGS = 0V, ID = 250A 450 500 VGS(TH) IDSS VGS = VDS, ID = 250A, (Figure 8) VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC 2.0 4.0 1 25 100 0.600 6.0 VGS = 0V, VDS = 25V, f = 1.0MHz, (Figure 9) 26 50 525 105 60 100 900 180 3000 600 200 0.83 V V V A A nA V ns ns ns ns pF pF pF oC/W MIN TYP MAX UNITS Drain to Source Breakdown Voltage RFM10N45 RFM10M50 Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Drain to Source On Voltage (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Impedance Junction to Case IGSS rDS(ON) VDS(ON) td(ON) tr td(OFF) tf CISS COSS CRSS RJC VGS = 20V, VDS = 0V VGS = 10V, ID = 10A, (Figures 6, 7) VGS = 10V, ID = 10A VDS = 250, ID 5A, VGS = 10V, RG = 50, RL = 50, (Figures 10, 11, 12) Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Reverse Recovery Time NOTE: 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. SYMBOL VSD trr ISD = 5A ISD = 4A, dISD/dt = 100A/s TEST CONDITIONS MIN TYP 950 MAX 1.4 UNITS V ns 5-2 RFM10N45, RFM10N50 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 0.8 Unless Otherwise Specified 12 10 8 6 4 2 0 25 0.6 0.4 0.2 0.0 0 25 50 75 100 TC , CASE TEMPERATURE (oC) 125 150 50 75 100 125 TC, CASE TEMPERATURE (oC) 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 100 TJ = MAX RATED, TC = 25oC ID, DRAIN CURRENT (A) 24 PULSE DURATION = 80s DUTY CYCLE 2% 20 10V, 8V 6.0V 5.0V 4.5V ID, DRAIN CURRENT (A) 10 ID MAX CONTINUOUS 16 12 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) VDSS (MAX) = 450V (RFM10N45) VDSS (MAX) = 500V (RFM10N50) DC VGS = 4.0V 8 4 0 0 2 4 6 8 10 12 VDS, DRAIN TO SOURCE VOLTAGE (V) 14 3.5V 3.0V 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 102 103 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS 24 20 ID, DRAIN CURRENT (A) 16 12 rDS(ON), DRAIN TO SOURCE ON RESISTANCE () VDS = 25V PULSE DURATION = 80s DUTY CYCLE 2% 1.2 VGS = 10V PULSE DURATION = 80s 1.0 DUTY CYCLE 2% TC = 125oC 0.8 0.6 TC = 25oC 0.4 TC = -40oC 0.2 0 TC = 125oC 8 TC = 25oC 4 TC = -40oC 0 0 1 4 5 2 3 VGS, GATE TO SOURCE VOLTAGE (V) 6 7 0 4 8 16 20 12 ID, DRAIN CURRENT (A) 24 28 FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 5-3 RFM10N45, RFM10N50 Typical Performance Curves 3 NORMALIZED DRAIN TO SOURCE ON RESISTANCE 2.5 NORMALIZED GATE THRESHOLD VOLTAGE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 0 50 100 150 200 2 1.5 1 0.5 0 -50 ID = 10A VGS = 10V Unless Otherwise Specified (Continued) 1.4 1.3 ID = 250mA VGS = VDS 0 50 100 150 200 TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 4000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CGS + CDS FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 500 10 VGS , GATE TO SOURCE VOLTAGE (V) VDS , DRAIN TO SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 3000 375 VDD = BVDSS 2000 CISS 250 1000 COSS CRSS 125 GATE VDD = BVDSS SOURCE VOLTAGE RL = 50 IG(REF) = 2.1mA VGS = 10V PLATEAU VOLTAGES IN DESCENDING ORDER: VDD = BVDSS VDD = 0.75 BVDSS VDD = 0.50BVDSS VDD = 0.25B VDSS DRAIN SOURCE VOLTAGE t, TIME (s) I G ( REF ) 80 -----------------------I G ( AC T ) 8 6 4 2 0 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 0 I G ( REF ) 20 -----------------------I G ( AC T ) 0 NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 5-4 |
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